High-Frequency GaN-Based Inverter Control Design Using PSIM
Ready, Ryan. (2020-08). High-Frequency GaN-Based Inverter Control Design Using PSIM. Theses and Dissertations Collection, University of Idaho Library Digital Collections. https://www.lib.uidaho.edu/digital/etd/items/ready_idaho_0089n_11377.html
- Title:
- High-Frequency GaN-Based Inverter Control Design Using PSIM
- Author:
- Ready, Ryan
- ORCID:
- 0000-0001-9637-3220
- Date:
- 2020-08
- Keywords:
- Gallium Nitride GaN PSIM Transphorm
- Program:
- Electrical and Computer Engineering
- Subject Category:
- Electrical engineering
- Abstract:
-
Gallium nitride (GaN) transistors are becoming more common in power electronics.
This thesis describes how they can be used to improve solar generators by improving
the inverter that they contain. The benefits of using GaN in an inverter include higher
efficiency, higher switching speeds, and the ability to reduce the size of some inverter
components. The full-bridge inverter topology was chosen for this inverter because of its
favorable high-frequency switching characteristics. Using a full-bridge GaN-based inverter
evaluation board from Transphorm, Inc., a PI control scheme was successfully designed
for this inverter using the simulation software PSIM. This control scheme performed
satisfactorily when tested in the inverter showing that PSIM can be a useful design tool
for high-frequency GaN-based inverters.
- Description:
- masters, M.S., Electrical and Computer Engineering -- University of Idaho - College of Graduate Studies, 2020-08
- Major Professor:
- Hess, Herb L
- Committee:
- Chakhchoukh, Yacine; Johnson, Brian K
- Defense Date:
- 2020-08
- Identifier:
- Ready_idaho_0089N_11377
- Type:
- Text
- Format Original:
- Format:
- application/pdf
- Rights:
- In Copyright - Educational Use Permitted. For more information, please contact University of Idaho Library Special Collections and Archives Department at libspec@uidaho.edu.
- Standardized Rights:
- http://rightsstatements.org/vocab/InC-EDU/1.0/