ETD PDF

Three-Dimensional Quantum Simulation in Nano-Transistors

Citation

Antonov, Kate Helen. (2023-05). Three-Dimensional Quantum Simulation in Nano-Transistors. Theses and Dissertations Collection, University of Idaho Library Digital Collections. https://www.lib.uidaho.edu/digital/etd/items/antonov_idaho_0089n_12610.html

Title:
Three-Dimensional Quantum Simulation in Nano-Transistors
Author:
Antonov, Kate Helen
Date:
2023-05
Program:
Electrical and Computer Engineering
Subject Category:
Electrical engineering
Abstract:

The FDTD method is being used to calculate transmission in nanoscale transistors using the Python programming language. The programs being used are three-dimensional implementations of the time-dependent Schrodinger Equation. Transmission is calculated by initializing a waveform representing an electron at the input of a transistor potential and using the FDTD method to simulate the interaction of the particle as it passes through the channel of the transistor. The percentage of the particle that passes through is the transmission. Simulations are done for MOSFET and FinFET transistors. The transmission is then used to calculate the current in the transistor for various bias voltages.

Description:
masters, M.S., Electrical and Computer Engineering -- University of Idaho - College of Graduate Studies, 2023-05
Major Professor:
Sullivan, Dennis M
Committee:
Sammarruca, Francesca; Shih, Ting-Yen; Law, Joseph
Defense Date:
2023-05
Identifier:
Antonov_idaho_0089N_12610
Type:
Text
Format Original:
PDF
Format:
application/pdf

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